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Abstract Organic–inorganic halide perovskite is regarded as one of the potential candidates for next generation resistive switching memory (memristor) material because of fast, millivolt‐scale switching, multilevel capability, and high On/Off ratio. Here, resistive switching property of HC(NH 2 ) 2 PbI 3 (FAPbI 3 ) depending on structural phase is reported. It is found that 1D hexagonal FAPbI 3 (δ‐FAPbI 3 ), formed at relatively low temperature, is active in memristor, while 3D trigonal FAPbI3 (α‐FAPbI 3 ), formed at temperature higher than 150 °C, is inactive. Failure of switching from low resistance state to high resistance state is found for α‐FAPbI 3 , while δ‐FAPbI 3 shows stable switching behavior. Density functional calculation reveals that iodine cluster in isotropic 3D α‐FAPbI 3 is so stable after forming filament that the filament is hard to be ruptured at off state. However, for anisotropic δ‐FAPbI 3 , iodine cluster is not stable and migration barrier is much lower for c ‐axis (0.48 eV) than for ab ‐plane (0.9 eV), which is beneficial for switching. The memristor devices based on δ‐FAPbI 3 demonstrate endurance up to 1200 cycles with On/Off ratio (>10 5 ), retention time up to 3000 s, multilevel storage capacity, and working even at 80 °C.
Yang et al. (Tue,) studied this question.
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