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A novel method is applied to determine the fixed positive charge density Q/sub f/ in plasma-enhanced chemical vapor deposited silicon nitride (SiN/sub x/) films on crystalline silicon surfaces. In this method, both surfaces of the SiN/sub x/-passivated silicon wafers are charged using a corona chamber and the deposited charge density is measured by means of a Kelvin probe. Subsequently, the carrier lifetime is measured and Q/sub f/ is determined from the dependence of the measured carrier lifetime on the corona charge density. This measurement technique allows us for the first time to determine the crucial parameter Q/sub f/ under illumination. In contrast to previous studies, a very high Q/sub f/ of about 2.3 /spl times/ 10/sup 12/ cm/sup -2/ is found, which is in good correspondence with CV measurements carried out in the dark. Finally, we show that the injection level dependence of the surface recombination velocity is mainly due to recombination in the space charge region at the Si/SiN/sub x/ interface.
Dauwe et al. (Fri,) studied this question.