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. This high responsivity can be attributed to the highly efficient light absorption and the enhanced photoconductive gain due to the existence of trap states. The exfoliated GeSe nanosheet is confirmed to be along the 001 (armchair direction) and 010 (zigzag direction) using transmission electron microscopy and anisotropic Raman characterizations. The angle-dependent electric and photoresponsive performance is systematically explored. Notably, the GeSe-based phototransistor shows strong polarization-dependent photoresponse with a peak/valley ratio of 1.3. Furthermore, the charge carrier mobility along the armchair direction is measured to be 1.85 times larger than that along the zigzag direction.
Zhou et al. (Thu,) studied this question.