Key points are not available for this paper at this time.
Experimental and theoretical studies of the gate field dependencies of the low-field mobilities of electrons and holes show that by changing surface orientations and oxidation conditions the two-dimensional electron gas formulation can successfully explain eta =1/3 (where eta is the weighting factor of mobile charge density used in calculating the effective field for the universal mobility curve) for
Lee et al. (Tue,) studied this question.