Room temperature strategy for high-performance Pr:IZO/Al 2 O 3 thin-film transistors: Enhanced stability of light-induced bias stress and applications in flexible devices

Key Points

• To develop high-performance Pr:IZO/Al2O3 bilayer thin-film transistors with enhanced stability and adaptability for flexible applications.
• Fabrication of Pr:IZO/Al2O3 bilayer metal-oxide thin-film transistors at room temperature.
• Assessment of mobility and stability under light-induced bias stress conditions.
• Evaluation of flexibility for potential applications.
• Achieved high mobility in the Pr:IZO/Al2O3 thin-film transistors under room temperature conditions.
• Demonstrated enhanced stability against light-induced bias stress, outperforming previous models.
• Showed effective performance in flexible device applications, indicating broad versatility.