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A vacuum interlock system which permits rapid loading of substrates for molecular beam epitaxy crystal growth is described. Substrates are introduced through a separate, independently pumped, loading chamber while maintaining the main growth chamber under vacuum, thereby minimizing contamination of the evaporation sources and reducing the downtime of the system between successive growth runs. The design permits outgassing of the substrates prior to their insertion in the growth chamber, and has provisions for a later addition of a separate sputtering or chemical etching capability.
Robinson et al. (Wed,) studied this question.
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