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ABSTRACT Using vacuum process, we fabricated Cu 2 ZnSnS 4 solar cells with 8.4% efficiency, a number independently certified by an external, accredited laboratory. This is the highest efficiency reported for pure sulfide Cu 2 ZnSnS 4 prepared by any method. Consistent with literature, the optimal composition is Cu‐poor and Zn‐rich despite the precipitation of secondary phases (e.g., ZnS). Despite a very thin absorber thickness (~600 nm), a reasonably good short‐circuit current was obtained. Time‐resolved photoluminescence measurements suggest a minority carrier‐diffusion length on the order of several hundreds of nanometers and relatively good collection of photo‐carriers across the entire absorber thickness. Copyright © 2011 John Wiley & Sons, Ltd.
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