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Abstract The De Haas ‐ Van Alphen and the Shubnikov ‐ De Haas effect are measured on oriented samples of single‐crystalline HgSe with electron concentrations between 1.08 and 3.26 × 10 18 cm −3 in pulsed magnetic fields up to 210 kOe. The results in strong fields show that the beating of the oscillations observed at smaller fields is due to inversion asymmetry splitting rather than to anisotropy of the Fermi surface. A pronounced spin splitting of about 1/4 of a period is observed, allowing the evaluation of the Landé factor of the conduction electrons.
Bliek et al. (Wed,) studied this question.