What question did this study set out to answer?

This research aims to describe the performance improvements of AlGaInP visible light-emitting diodes.

December 31, 1990

High performance AlGaInP visible light-emitting diodes

Key Points

This research aims to describe the performance improvements of AlGaInP visible light-emitting diodes.
The devices were developed using low-pressure organometallic vapor phase epitaxy (OMVPE).
A double heterostructure design was utilized with an AlGaInP active region on a GaAs substrate.
External quantum efficiencies of the devices exceed 2%.
Luminous efficiencies reach 20 lm/A in the yellow spectral region (590 nm).
Performance is approximately ten times better than existing yellow LEDs.

Abstract

The performance of surface-emitting visible AlGaInP light-emitting diodes (LEDs) is described. The devices have external quantum efficiencies greater than 2% and luminous efficiencies of 20 lm/A in the yellow (590 nm) spectral region. This performance is roughly ten times better than existing yellow LEDs and is comparable to the highest performance red AlGaAs LEDs currently available. The devices also perform favorably compared to existing devices in the orange and green spectral regions. Low-pressure organometallic vapor phase epitaxy (OMVPE) is used to grow the epitaxial layers. The devices consist of a double heterostructure with an AlGaInP active region grown on a GaAs substrate.

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