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We report the first direct observation of phosphorus and arsenic donor states in hydrogenated amorphous silicon and germanium by electron-spin resonance. The states are identified via their characteristic hyperfine structure, and are attributed to neutral donors. A comparison with crystalline silicon and germanium shows that the disorder potential of the amorphous phase leads to a stronger localization and a wide distribution of donor states.
Stutzmann et al. (Mon,) studied this question.