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Optical reflectance studies of the c face of pyrolytic boron nitride were carried out at room temperature in the photon energy range 0. 45---10 eV. A Kramers-Kronig analysis was performed to determine the in-plane real (₁) and imaginary (₂) dielectric functions. Infrared-active transverseoptic phonons were observed at 770 and 1383 cm^-1. Strong impurity- and defect-associated absorption was observed throughout the visible and near-ultraviolet region (1---5 eV) which masks, to some extent, the threshold for absorption across the electronic energy band gap. From ₂ () and the absorption coefficient we estimate the direct band gap between bands to be 5. 20. 2 eV. Interband transitions associated with high joint density of states were observed at 6. 10 and 6. 85 eV. The structure in ₂ () at energies >5 eV is identified with specific transitions predicted by previous energy-band calculations.
Hoffman et al. (Thu,) studied this question.
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