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We have investigated various doped metal oxides such as copper doped molybdenum oxide, copper doped Al 2 O 3 , copper doped ZrO 2 , aluminium doped ZnO, and Cu x O for novel resistance memory applications. Compared with non-stoichiometric oxides (Nb 2 O 5-x , ZrO x , SrTiO x ), doped metal oxides show higher device yield. Moreover, Cu:MoO x have demonstrated excellent memory characteristics such as reliability under programming cycles, potential multi-bit operation, good data retention, highly scalable property, and fast switching speed. The switching mechanism of the copper doped molybdenum oxide can be explained by the generation and rupture of multi-filaments under the electrical stress
Lee et al. (Sun,) studied this question.