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Evidence on the presence and binding energy of the shallow N acceptor is obtained for growth-doped liquid-phase-epitaxial (LPE) and organometallic chemical-vapor-deposited (OMCVD) ZnSe thin single-crystal layers. The small increase in N-acceptor bound-exciton (BE) binding energy E₁ₗ relative to the Li acceptor, 0. 3 meV, is clearly established from intercomparison of spectral features and use of tunable dye-laser spectroscopy. The LPE crystals contain a new unidentified donor E₃=26. 8 meV, as well as In and Al minor donors, while the dominant donor in these OMCVD crystals is Ga. Selectively excited donor-acceptor-pair (DAP) luminescence spectra contain a satellite structure which provides an estimate of ({E₀) }₍=1111 meV, distinctly 2. 20. 5 meV shallower than the Li acceptor but 21 meV deeper than some previous estimates from LPE ZnSe: N. This estimate is confirmed by A^0, X BE "two-hole" satellites observed under strong optical pumping. The effective-mass value of E₀ is placed close to 110 meV. The dependence of displacement energy of this structure on DAP separation is very significant in the comparison of Li and N acceptors. The relationship of E₁ₗ and E₀ is retrograde for the shallowest acceptors N, Li, and Na so far identified in ZnSe. Sharp differences between the excitation spectra of BE photoluminescence between n-type ZnSe and p-type ZnTe doped to comparable concentrations are discussed. It is concluded that the best N-doped OMCVD ZnSe yet available is still n type due to residual donors.
Dean et al. (Tue,) studied this question.