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The effective mobility of electrons in the inverted 〈100〉 Si surface was measured over a wide range of temperatures, gate voltages, and back-bias voltages. At a first glance the mobility appears to be strongly dependent on the channel surface doping. When the data were reanalyzed under a new approach where the mobility is plotted as a function of an effective perpendicular electric field experienced by the inversion layer, a universal curve has developed from the experimental data which indicates that the inversion layer mobility is not a function of doping density in the range (N A 17 cm -3 ) and not a function of nominal surface processing. Our model indicates that the MOSFET surface inversion layer mobility is a reproducible property associated with the Si/SiO 2 system and not a parameter sensitive to nominal process variations encountered in the present n-channel Si-Gate Technology.
Sabnis et al. (Mon,) studied this question.