CMOS transistor mismatch model valid from weak to strong inversion

A five parameter mismatch model continuous from weak to strong inversion is presented. The model is an extension of a previously reported one valid in the strong inversion region 1. A mismatch characterization of NMOS and PMOS transistors for 30 different geometries has been done with this continuous model. The model is able to predict current mismatch with a mean relative error of 13.5% in the weak inversion region and 5% in strong inversion. This is verified for 12 different curves, sweeping V/sub G/, V/sub DS/,V/sub S/.