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Pulsed room-temperature operation of LPE In1−xGaxP1−zAsz double heterojunction (DH) laser diodes at short wavelength is described (Jth≲2×104 A/cm2, λ∼6470 Å, heterobarrier ΔE∼137 meV). The differential quantum efficiency of these diodes is ηext∼5%, and is considered to be low because of large diode size, thick active region, probably some layer mismatch and growth defects, and relatively poor heat sinking. The temperature dependence of threshold current density (Jth∼J0 expT/T0, T0∼74 °K) is presented in the range 77–300 °K and is compared with similar diodes having smaller heterobarriers and which, as expected, exhibit poorer performance (smaller T0).
Coleman et al. (Sun,) studied this question.