van der Waals interactions between excited-state atoms and dispersive dielectric surfaces

van der Waals interactions between atoms and dielectric surfaces are reinvestigated. To describe the nonretarded interaction potential between a dispersive dielectric surface and an atom in an arbitrary internal energy state, we derive a general expression in terms of an integral, over real frequency, of the combined atom and surface polarizabilities. It is shown that, for excited atoms, the expression is equivalent to the one obtained by Wylie and Sipe Phys. Rev. A 32, 2030 (1985). We thus demonstrate how to extend this approach to excited atoms interacting with birefringent dielectrics. For isotropic dielectrics, a method of integration in closed form allows us to derive an approximate formula for the van der Waals interaction constant in terms of resonance frequencies and oscillator strengths of both the atom and the dielectric. Frequency-dependent ``dielectric reflection'' coefficients are introduced for virtual atomic dipole couplings either in absorption or in emission. In absorption, the reflection coefficient is always positive and smaller than unity. In emission, it may take arbitrary values, positive or negative (corresponding to van der Waals repulsion). Such a behavior is shown to be related to resonant excitation exchange between the atomic system and the dielectric medium, when an atomic transition frequency gets in resonance with a dielectric absorption band. Numerical calculations performed for the cesium-sapphire system are shown to be in good agreement with data obtained by selective-reflection spectroscopy. Finally, experimental tests of the birefringent character of the sapphire response are discussed.