Key points are not available for this paper at this time.
Studies of the electrical properties of Si single crystals with (Sb) layers of various sheet densities N₃, of Sb atoms (510^12--310^14cm^-2) have furnished detailed information about the low-temperature features of the electron transport in this system. The metal-type conductivity of layers at N₃>~310^13cm^-2 exhibits manifestations of the weak localization of electrons and electron-electron interaction in a two-dimensional system. The temperature dependence of electron phase relaxation time, the spin-orbit interaction time, and parameter ^D of the electron-electron interaction are determined. It is found that a decrease in the electron density in the layer is accompanied by decrease in the parameter ^D. The effect of electron heating by an electric field is used to find the temperature dependence of the electron-phonon relaxation time. At low temperature the hopping-type conductivity of layers at N₃<~110^13cm^-2 is realized; at sufficiently low temperatures (10 K) the two-dimensional Mott law of variable-range hopping is seen. The nonlinearity of the current-voltage characteristics observed is well described by the theory of non-Ohmic hopping conductivity in moderately strong electric fields.
agan et al. (Tue,) studied this question.