Controlled Polarizability of One‐Nanometer‐Thick Oxide Nanosheets for Tailored, High‐κ Nanodielectrics

Abstract An important challenge in current microelectronics research is the development of techniques for making smaller, higher‐performance electronic components. In this context, the fabrication and integration of ultrathin high‐ κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high‐performance nanodielectrics using one‐nanometer‐thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO 5 , Ti 2 NbO 7 , Ti 5 NbO 14 ), the octahedral distortion inherent to site‐engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160–320), the largest value seen so far in high‐ κ nanofilms with thickness down to 10 nm. Furthermore, these superior high‐ κ properties are fairly temperature‐independent with low leakage‐current density (<10 −7 A cm −2 ). This work may provide a new recipe for designing nanodielectrics desirable for practical high‐ κ devices.