Short-channel Al 0.5 Ga 0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHz

The authors have demonstrated 0.25 µm gate-length Al0.5Ga0.5N/GaN MODFETs on sapphire substrates which exhibit CW output power densities > 3 W/mm at 18 GHz, the highest reported to date for microwave FETs in the K band. This confirms the promise of the high Al-content AlGaN/GaN MODFET structure.