What question did this study set out to answer?

The aim is to evaluate the high-field performance of Si-doped n-AlN layers formed through pulsed MOCVD.

February 14, 2026Open Access

High Field Performance of Si-Doped n-AlN Layers Grown Using Pulsed MOCVD

Key Points

The aim is to evaluate the high-field performance of Si-doped n-AlN layers formed through pulsed MOCVD.
Utilized pulsed MOCVD process for layer growth.
Characterized electrical performance under high reverse bias voltages.
Assessed the durability against electric fields.
n-AlN layers withstand reverse bias voltages effectively.
Ability to sustain electric fields up to 9.9 MV cm−1 is demonstrated.
Pulsed doping approach shows superior efficiency compared to conventional methods.

Abstract

We report on the study of high-field performance of Si-doped n-AlN layers that were grown using a pulsed metalorganic chemical vapor deposition (PMOCVD) process. In the past we showed this pulsed doping approach to lead to doping efficiency superior to that in the conventional MOCVD process. Here using them as the drift layer for a quasi-vertical conduction Schottky barrier, we show their ability to withstand high reverse bias voltages and sustain an electrical field as high as 9.9 MV cm−1. Our study thus demonstrates the viability of the PMOCVD growth and doping approach to yield n-AlN layers suitable for high current-high voltage devices.

High Field Performance of Si-Doped n-AlN Layers Grown Using Pulsed MOCVD

Key Points

Abstract

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