Demonstrates optimized emission in single-photon sources using strained monolayer WSe2, indicating advances in nanoscale light engineering.
Two-dimensional (2D) semiconductors such as monolayer WSe₂ have attracted significant interest for their quantum properties and potential as scalable single-photon emitters. However, conventional microphotoluminescence (μ-PL) techniques are fundamentally limited by optical diffraction, hindering access to critical nanoscale features such as strain gradients and localized quantum confinement. In this study, we utilize tip-enhanced photoluminescence (NanoPL) with a spatial resolution of ≈10 nm to directly image the emission landscape of monolayer WSe₂ on top of nanopillars at room temperature. Our results reveal two distinct localization regimes associated with leading theoretical models for single-photon activation and provide guidelines for deterministic nanoengineering of quantum light sources.
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Liberal et al. (2026) studied this question.
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