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January 15, 1980Applied Physics LettersOpen Access

The effect of substrate temperature on the current threshold of GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxy

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Authors

WTW. T. TsangArup Group (United States)FRF. K. ReinhartÉcole Polytechnique Fédérale de LausanneJDJ. A. DitzenbergerAT&T (United States)

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Tsang et al. (1980) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2b4https://doi.org/10.1063/1.91400
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