Potential advantages of analog- and mixed-signal nanoelectronic circuits, based on floating-gate devices with adjustable conductance, for neuromorphic computing had been realized long time ago. However, practical realizations of this approach suffered from using rudimentary floating-gate cells of relatively large area. Here, we report a prototype 28×28 binary-input, ten-output, three-layer neuromorphic network based on arrays of highly optimized embedded nonvolatile floating-gate cells, redesigned from a commercial 180-nm nor flash memory. All active blocks of the circuit, including 101 780 floating-gate cells, have a total area below 1 mm2. The network has shown a 94.7% classification fidelity on the common Modified National Institute of Standards and Technology benchmark, close to the 96.2% obtained in simulation. The classification of one pattern takes a sub-1- μ s time and a sub-20-nJ energy-both numbers much better than in the best reported digital implementations of the same task. Estimates show that a straightforward optimization of the hardware and its transfer to the already available 55-nm technology may increase this advantage to more than 10²× in speed and 10⁴× in energy efficiency.
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Merrikh-Bayat et al. (2017) studied this question.
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