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Scanning-tunneling-microscopy measurements of submonolayer growth of Si on Si(001) show anisotropic island shapes. From coarsening experiments it is determined that these shapes are a consequence of the growth kinetics. They can be explained by a lateral accommodation coefficient for atoms arriving at the edge of islands that differs by an order of magnitude at the ends and at the sides of dimer rows.
Mo et al. (Wed,) studied this question.