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Depletion-mode vertical Ga 2 O 3 metal-oxide-semiconductor field-effect transistors featuring a current aperture were developed on a halide vapor phase epitaxial drift layer grown on a bulk β-Ga 2 O 3 (001) substrate. Three ion implantation steps were employed to fabricate the n ++ source regions, lateral n channel, and p current blocking layers, where Si and N were selected as the donor and deep acceptor dopant species, respectively. The transistors delivered a drain current density of 0.42 kA/cm 2 , a specific on-resistance of 31.5 mΩ·cm 2 , and an output current on/off ratio of over 10 8 . High-voltage performance of the present devices was hampered by a large gate oxide field in the off-state causing high gate leakage, a limitation that can be readily overcome through optimized doping schemes and an improved gate dielectric. The demonstration of a planar-gate vertical Ga 2 O 3 transistor based on a highly manufacturable all-ion-implanted process greatly enhances the prospects for Ga 2 O 3 -based power electronics.
Wong et al. (Mon,) studied this question.