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A novel nonvolatile memory Colossal Magnetoresistive (CMR) thin film resistor for Resistance RAM (RRAM) application has been characterized. A 1RIT RRAM test circuit based on 0.5 /spl mu/m CMOS has been fabricated. RRAM is a low power high-speed memory technology. The memory cell programming pulse is less than 5 V and pulse width as narrow as 10 ns. The high/low resistance ratio may be larger than 1,000. The results of a test array indicated that RRAM could be programmed by bit or by word.
Zhuang et al. (Thu,) studied this question.