Key points are not available for this paper at this time.
Properly designed GaAs–AlxGa1−xAs double heterostructures produce strong optical waveguides. The propagation constants of the waveguide modes can be readily modulated by the linear electro-optic effect. Measurements at a wavelength λ = 1.153 μm have yielded a phase modulation of 180° with -10 V applied bias to a device only 1 mm long. The power necessary to phase modulate light at λ ≈ 1 μm by 1 rad is of the order of 0.1 mW per 1-MHz band-width. The power dissipation is very strongly dependent on wavelength. At present, the high-frequency modulation is limited by the series resistance and capacitance of the device. The highest cutoff frequency determined thus far, ≈ 4 GHz, is considerably lower than that calculated based on the geometry and material properties.
Reinhart et al. (1972) studied this question.