Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i. e. , gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature (T) and carrier density (n). We find a temperature-dependent phonon-limited resistivity ₏₇ (T) to be linear in temperature for T500. 3em{0ex}K with the room-temperature intrinsic mobility reaching the values of above 10^50. 3em{0ex}cm^2∕V0. 2em{0ex}s. We comment on the low-temperature Bloch--Gr\"uneisen behavior where ₏₇ (T) T^4 for unscreened electron-phonon coupling.