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The polarization decay process in SrBi 2 (Ta, Nb) 2 O 9 capacitors and retention characteristics of a 288-bit ferroelectric memory device fabricated from SrBi 2 (Ta, Nb) 2 O 9 were studied. The remanent polarization decay at room temperature showed good linearity when plotted against logarithmic retention time over a wide range of 10 -3 –10 5 s. The distribution of times to failure of a 288-bit memory was fit to a model having a linear relationship between log (log t f ) and 1/ T for the period of infant failures and to the Arrhenius model having the form log t f vs 1/ T for the period of random failures, where t f is the time to failure and T is the temperature. The activation energy was found to be 0.35 eV for infant failures and 1.15 eV for random failures. Possible causes for the difference in activation energies are discussed.
Shimada et al. (Mon,) studied this question.
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