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A Sn doping strategy is demonstrated to improve lithium diffusion kinetics by expanding the spacing of (003) planes without destroying the layered structure. A large (003) spacing will significantly decrease the energy barrier associated with lithium diffusion. Besides better rate capability, the Sn-doped material exhibits an unexpected much improved capacity above 3.0 V (vs Li(+) /Li), which is highly desired in future applications.
Wang et al. (Thu,) studied this question.
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