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Intracenter 1S₃/₂ (₈) -2S₃/₂ (₈) electronic Raman scattering has been observed from the negative charge state of the 78-meV double acceptor that is commonly found in GaAs grown by the liquid-encapsulated Czochralski technique. The magnitude of this transition energy is identical to the separation between the photoluminescence bands that involve this double acceptor and occur at 1. 441- and 1. 283 eV. This observation indicates that both the 1. 441 and 1. 283-eV emission bands arise from the capture of an electron by the neutral charge state of the 78-meV double acceptor. The higher- or lower-energy emission bands occur when the hole bound to the negative charge state of this double acceptor occupied either the 1S₃/₂ (₈) or 2S₃/₂ (₈) hydrogenic states, respectively. Because a similar relationship should be observed between emission bands involving other double acceptors, the observation of such a relationship for an unidentified shallow acceptor provides strong evidence for its double-acceptor nature.
Shanabrook et al. (1986) studied this question.