Key points are not available for this paper at this time.
An MOS transistor in silicon with 10−nm silicon dioxide as gate insulator and 10−nm palladium as gate electrode was fabricated. The threshold voltage of this transistor was found to be a function of the partial pressure of hydrogen in the ambient atmosphere. At a device temperature of 150 °C it was possible to detect 40 ppm hydrogen gas in air with response times less than 2 min.
Lundström et al. (Wed,) studied this question.