Key points are not available for this paper at this time.
An estimate for the work function ― has been obtained from the electrical properties of ITO/n-Si et ITO/p-Si junctions. Since the evaporation method of preparing junctions does not seem to involve any process that may create some kind of charged layer on the silicon surface, the work function estimated seems to be realistic
Balasubramanian et al. (Tue,) studied this question.