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The fundamental parameters of gold in germanium have been investigated between 60-300^ by absorption, photoconductivity, and lifetime studies. Photoconductivity measurements reveal the following capture cross sections for electrons and holes at 80^ (subscript refers to carrier being captured; superscript to charge state of gold center): {₇}^-110^-13 cm^2, {₄}^0610^-14 cm^2, {₄}^-10^-17 cm^2. Lifetime studies on n-type samples show the existence of a 0. 018-ev Coulomb barrier at singly charged sites and an indication that a thermal (phonon) mechanism is involved in the electron capture process. The lifetime also manifests itself in the noise spectrum. The photoconductive absorption cross section at 80^ of p-type gold-doped germanium (0. 15-ev level) is found to be 210^-16 cm^2 at 1. 8 microns. It is suggested that differences between the absorption and photoconductive spectra are due to departure from spherical symmetry of valence band contours away from k=0.
Johnson et al. (1960) studied this question.