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Individual ZrS2-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS2-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Li et al. (Fri,) studied this question.