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Highly packed, p lanar mult i level interconnect ion, wi th finely pat terned A1 metal l izat ion is essential for real izing deep submicron (0.5 ~m) level VLSIs. New A1 deposi t ion techn iques uch as bias sputter ing have been proposed to prov ide suff icient step coverage of metal l izat ion in the fine, h igh-aspect ratio contacts. They have to be accompan ied by forming a rel iable bar-r ier layer such as TiN prior to the A1 deposit ion. React ive sputter ing has been successful ly used for depos i t ing the TiN film (1). However, fi lms deposi ted by the method can-not have suff icient step coverage for apply ing them to those future VLSIs. The coverage prob lem of the barr ier layer has been left behind. New techn iques wh ich can pro-v ide appropr iate step coverage of TiN film are desired. Low pressure chemical vapor deposi t ion (LPCVD) of
Yokoyama et al. (Wed,) studied this question.