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PbZr x Ti1-x O3 (PZT) films were prepared on Pt, Pt/Ti or Pt/Ti/Ta electrodes by the sol-gel process using rapid thermal annealing (RTA). In the case of Pt and Pt/Ti electrodes on poly-Si, thermal treatments of PZT films gave rise to interdiffusion between Pt and Si. This exerted an unfavorable influence on the preparation of PZT films with perovskite structure. The barrier effect of Ta films and the effect of Ti films on the crystallization of PZT films were investigated by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The electrical properties such as dielectric constants and P-E hysteresis curves were measured for PZT films with various Zr/Ti ratios on Pt/Ti/Ta/SiO2/Si(100) substrates.
Sameshima et al. (1993) studied this question.