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The I-V characteristics of two serially coupled small tunnel junctions (about 10^-18--10^-19 F capacitances) are measured at 4 K. The junctions are formed using a scanning-tunneling microscope to probe a metal droplet deposited on an oxidized metal substrate. Sharply defined Coulumb steps due to single-electron dynamics, oxide polarization, and nonlinear (voltage dependent) tunneling rates are observed. The results show very good quantitative agreement with theoretical calculations based on the semiclassical picture.
Wilkins et al. (1989) studied this question.