Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region

The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15–1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 μm.