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Photoemission measurements have been made of the upper d levels in ZnO, ZnSe, ZnTe, CdS, CdSe, CdTe, HgSe, and HgTe using 21. 2-eV (584-) and 16. 8-eV (740-) radiation. All the samples except for HgSe and HgTe were cleaved and measured in an oil-free ion-pumped vacuum system at a pressure in the 10^-7-10^-8 Torr range. The results agree extremely well with values obtained by x-ray-induced-electron-emission spectroscopy. The spectra obtained for HgSe and HgTe make it possible to positively verify the identification of certain peaks observed in photoemission spectra of the IIB-VIA compounds as being due to the upper d levels. The photoemission results reported in this study are also compared with both reflectivity and energy-loss measurements to obtain information about the optical density of states in the conduction bands of these compounds.
Vesely et al. (Wed,) studied this question.