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A complete microelectrochemical transistor on a single chip based on the reversible, solid state oxidation of poly(3-methylthiophene) is reported. An array of eight, individually addressable, microelectrodes each approx. 2 micrometer wide X approx. 50 micrometer long X 0.1 micrometer high and separated from each other by approx. 1.2 micrometer is first modified by electrochemical polymerization of 3-methylthiophene such that microelectrodes 1-6 are coated with redox active poly(3-methylthiophene). The remaining two microelectrodes 7, 8 as the counterelectrode, and a spot of Silver epoxy on the chip is used as a pseudoreference electrode. The solid state device is then fabricated by 1) withdrawing the chip from methyl cyanide/0.1 molar Lithium carbon tri-fluoro sulfite while holding the poly(3-methylthiophene)-coated microelectrodes at +0.65 V vs. SCE and 2) coating the device (Silver quasi-reference, poly(3-methythiophene), and counterelectrode) with polyethylene oxide containing Lithium Carbon Tri-fluora sulfite, Polyethylene oxide lithium carbon tri-fluoro sulfite. The solid state device has been characterized at 95 C under a N2 atmosphere. The key fact is that the thin film of poly(3-methylthiophene) can be reversibly oxidized to its conducting state in th solid state when coated with Polyethylene oxide lithium carbon tri-fluoro sulfite.
Chao et al. (Wed,) studied this question.