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A new diluted magnetic III-V semiconductor of In₁-ₗMnₗAs (x0. 18) has been produced by molecular-beam epitaxy. Films grown at 300 ^ are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200 ^, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.
Munekata et al. (Mon,) studied this question.