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The electron tunneling through quantized states in an ultrathin hydrogenated amorphous silicon (a-Si: H) layer sandwiched with stoichiometric silicon nitride (a-Si₃N₄: H) barriers has been systematically investigated. The I-V characteristics have exhibited the current bumps arising from the resonant tunneling through the double barriers. The effective mass of tunneling electron is obtained to be 0. 6m₀, being consistent with the value determined from the optical band-gap data for a-Si: H/a-Si₃N₄: H multilayers.
Miyazaki et al. (Mon,) studied this question.