Key points are not available for this paper at this time.
In 2--wide Hall bars of high-mobility GaAs/AlGaAs heterostructure resistance fluctuations of quasiperiod 0. 016 T are observed near the diagonal resistance minima for Landau-level filling factors =1, 2, 3, 4. This behavior is consistent with resonant reflection through magnetically bound states as a mechanism for the breakdown of dissipationless transport in narrow channels. In the = (1/3 minimum of the fractional quantum Hall effect we observe similar fluctuation structure, but with a period of 0. 05 T3, indicative of transport by quasiparticles of fractional charge e/3.
Simmons et al. (Mon,) studied this question.