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Thermionic emission from the Si/Cs/O (100) surface has been investigated. Identical emission characteristics are seen from both n- and p-type bulk samples, implying that the emission arises from the surface region of the crystal. Adsorbed hydrogen accelerates the decay of thermionic emission. From the temperature dependence of the thermionic current, the temperature-independent portion of the work function φ0 is found to be 1.06 eV.
Ramon U. Martinelli (Fri,) studied this question.
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