Key points are not available for this paper at this time.
The effect of electric fields on extrinsic semiconductor infrared-detector response at low temperatures is examined quantitatively at wavelengths beyond the zero-field cutoff. General formulas are presented along with numerical results for Si:P and Si:In. These results illustrate the possibility of narrow-bandwidth detection and electronically modulated response.
Coon et al. (1983) studied this question.