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Continuous wave operation of an Al0.21Ga0.31In0.48P /Ga0.52In0.48P /Al0.21Ga0.31In0.48P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 μm and the threshold current was 55 mA for a diode with a nitride-insulated, 8-μm-wide and 250-μm-long stripe geometry.
Ikeda et al. (Sat,) studied this question.