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Diffusion of atoms in a crystalline lattice is a thermally activated process that can be strongly accelerated by defects such as grain boundaries or dislocations. When carried by dislocations, this elemental mechanism is known as "pipe diffusion." Pipe diffusion has been used to explain abnormal diffusion, Cottrell atmospheres, and dislocation-precipitate interactions during creep, although this rests more on conjecture than on direct demonstration. The motion of dislocations between silicon nanoprecipitates in an aluminum thin film was recently observed and controlled via in situ transmission electron microscopy. We observed the pipe diffusion phenomenon and measured the diffusivity along a single dislocation line. It is found that dislocations accelerate the diffusion of impurities by almost three orders of magnitude as compared with bulk diffusion.
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M. Legros
Centre National de la Recherche Scientifique
Gerhard Dehm
Max-Planck-Institut für Nachhaltige Materialien
Eduard Arzt
Leibniz-Institute for New Materials
Science
Centre National de la Recherche Scientifique
University of Kentucky
Centre d’Élaboration de Matériaux et d’Études Structurales
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Legros et al. (Thu,) studied this question.
synapsesocial.com/papers/6a2002e677451c29e065ab7c — DOI: https://doi.org/10.1126/science.1151771