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An ac measurement technique to accurately determine ₀ = ₀C₎ₗW₄₅₅/L₄₅₅, the mobility degradation coefficient Θ, and the drain-source resistance Rₓ = Rₒ + R₃ is presented, and results are given for a PMOS transistor array with constant width (40 µm) and variable channel lengths (ranging from 0. 8 to 4 µm). Because the proposed method does not require significant data reduction, it offers a number of advantages over previously published techniques. In addition, the method yields a refined value for the threshold voltage by curve fitting the measured and computed gate characteristics with V T as a parameter. This procedure reduces the sensitivity of the technique to small errors made in a threshold-voltage measurement.
Thoma et al. (Sat,) studied this question.